Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
2. Dislocation scattering in a two-dimensional electron gas
3. Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
4. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
5. Scanning Photoluminescence Microscope with Sub-micron Resolution and High Optical Throughput at a Low Temperature
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development of a novel cryogenic microscope with numerical aperture of 0.9 and its application to photosynthesis research;Biochimica et Biophysica Acta (BBA) - Bioenergetics;2014-06
2. Self-organized domain formation in low-dislocation-density GaN;Superlattices and Microstructures;2004-10
3. Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells;MRS Proceedings;2004
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