Focused ion molecular-beam epitaxy – a novel approach to 3D device fabrication using simultaneous p- and n-type doping
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures
2. A variable energy focused ion beam system for in situ microfabrication
3. Dopant patterning in three dimensions during molecular beam epitaxial growth using anin-situfocused ion gun
4. Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth
5. Metallurgy and microfabrication applications of gold-silicon-beryllium liquid-metal field-ion sources
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1. Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation;Science China Materials;2021-10-15
2. Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well;Applied Physics Letters;2007-01-29
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4. Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells;Applied Physics Letters;2006-09-11
5. Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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