Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers
2. Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation
3. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
4. Direct observation of resolidification from the surface upon pulsed‐laser melting of amorphous silicon
5. Time‐resolved reflectivity measurements during explosive crystallization of amorphous silicon
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1. Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-05
2. Study of silicon doped with zinc ions and annealed in oxygen;Semiconductors;2017-02
3. Investigation of silicon doped by zinc ions with a large dose;Bulletin of the Russian Academy of Sciences: Physics;2016-12
4. Visualization and identification of nanoparticles in si subjected to the successive implantation of 64Zn+ and 16O+ ions;Bulletin of the Russian Academy of Sciences: Physics;2015-11
5. Study of the properties of a Si surface layer implanted with 64Zn+ and 16O+ ions during the formation of ZnO nanoparticles under thermal annealing;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2015-05
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