Damage accumulation in hydrogen-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Mechanical response of single crystal Si to very high fluence H+ implantation
2. Proc. 13th Int. Conf. on Defects in Semiconductors;Choyke,1984
3. Bonding and thermal stability of implanted hydrogen in silicon
4. Controlled hydrogenation of amorphous silicon at low temperatures
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2. Surface morphology and optical properties of MeV-energy heavy-ion irradiated crystalline Si and crystalline Ge: Possibility of formation of porous material;Philosophical Magazine B;1996-12
3. Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-12
4. TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon;Applied Physics A Solids and Surfaces;1992-02
5. TEM characterization of phosphorus-implanted silicon;Proceedings, annual meeting, Electron Microscopy Society of America;1991-08
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