Author:
Golanski A.,Grob A.,Grob J.J.,Holland O.W.,Pennycook S.J.,White C.W.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. The production of non linear damage under molecular ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
2. High energy high dose Si implantation into Ge and the effect of subsequent thermal annealing;Radiation Effects and Defects in Solids;1999-01
3. Damage production in Si by MeV carbon cluster irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-12
4. Electrical effects of residual defects in Si after high energy implantation of Ge+ ions and annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
5. Temperature dependence of atomic mixing at the copper-silicon interface;Thin Solid Films;1993-12