Shallow junction formation by dual Ge/B, Sn/B and Pb/B implants
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Channeling effect for low energy ion implantation in Si
2. Optimization of BF2+implanted and rapidly annealed junctions in silicon
3. Sub‐100‐nmp+‐nshallow junctions fabricated by group III dual ion implantation and rapid thermal annealing
4. Dual ion implantation technique for formation of shallowp+/njunctions in silicon
5. The role of transient damage annealing in shallow junction formation
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctions;Microelectronics Journal;2003-10
2. Mechanical strain and electrically active defects in Si implanted with Ge+ions;Semiconductor Science and Technology;1999-01-01
3. Evolution of mechanical strain and extended defects in annealed (100) silicon samples implanted with Ge+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04
4. Deep defect levels and mechanical strain in Ge+-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
5. The use of multi-species implantation for carrier profile control in GaAs MESFETs fabricated using silicon ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04
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