Electrically active recoil profiles of Al in silicon-Reference-Cited by-同舟云学术

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Electrically active recoil profiles of Al in silicon

Published:1986-08 Issue:1 Volume:17 Page:52-55
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Paprocki K.,Bryłowska I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Recoil implantation of antimony into silicon

2. Behavior of recoiled oxygen in through-oxide arsenic-implanted silicon

4. Effect of recoil atoms on resolution in ion-beam lithography

5. Transmission sputtering and recoil implantation from thin metal films under ion bombardment

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recoil Implantation from Sb Thin Films under Ion Bombardment;Physica Status Solidi (a);1989-03-16

2. Depth distributions of Au recoil atoms in silicon;Applied Physics A: Solids and Surface;1988-08

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