Acceptor-donor pairs in germanium-Reference-Cited by-同舟云学术

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Acceptor-donor pairs in germanium

Published:1992-01 Issue:1-2 Volume:63 Page:217-220
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Forkel D.,Achtziger N.,Baurichter A.,Deicher M.,Deubler S.,Puschmann M.,Wolf H.,Witthuhn W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy

2. Investigation of cadmium‐donor pairs in silicon

3. Int. Workshop on Hyperfine Interactions;Achtziger,1990

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1. STRESS AND TEMPERATURE DEPENDENCE OF THE HYPERFINE INTERACTIONS AT POINT DEFECTS IN SEMICONDUCTORS;International Journal of Modern Physics B;2010-04-10

2. Evidence of palladium-defect pairing in intrinsic germanium;Hyperfine Interactions;2010-04

3. Evidence of palladium-defect pairing in intrinsic germanium;HFI / NQI 2010;2010

4. Effects of external stress on defect complexes in semiconductors;Journal of Physics: Condensed Matter;2007-06-04

5. Uniaxial compressive stress induced nuclear quadrupole interaction at the 111Cd nucleus in n-doped silicon;Physica B: Condensed Matter;2006-03

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