The lattice site of 10F implanted into diamond by TDPAD-Reference-Cited by-同舟云学术

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The lattice site of 10F implanted into diamond by TDPAD

Published:1988-12 Issue:3-4 Volume:35 Page:423-430
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Connell S.,Bharuth-Ram K.,Sellschop J.P.F.,Stemmet M.C.,Appel H.,Lowther J.E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Damage and lattice location studies in high‐temperature ion‐implanted diamond

2. Effectivep‐type doping of diamond by boron ion implantation

3. Nuclear Physics Applications on Material Science;Vianden,1988

4. Residence sites for111In implanted in diamond

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hyperfine interaction studies in diamond;Physica B: Condensed Matter;2007-02

2. Site occupancy and molecular complex formation of F-19 ions in fullerenes C-60 and C-70 studied by TDPAD;Hyperfine Interactions;1999

3. PAD investigation of19F in fullerites;Hyperfine Interactions;1993-03

4. Beam assisted molecular rearrangement observed by TDPAD for fluorine complexes in diamond;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-02

5. Ion-implanted structures and doped layers in diamond;Materials Science Reports;1992-02

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