Author:
Kinomura A.,Takai M.,Matsumoto K.,Namba S.,Agawa Y.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
15 articles.
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1. Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
2. Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
3. Development of enhanced depth-resolution technique for shallow dopant profiles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05
4. Surface structure of hydrogen terminated (1 0 0) Si by medium energy ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
5. Ir and Rh silicide formation investigated by microprobe RBS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-07