Doping of fullerenes by ion implantation-Reference-Cited by-同舟云学术

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Doping of fullerenes by ion implantation

Published:1993-01 Issue: Volume:80-81 Page:1456-1459
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kastner J.,Kuzmany H.,Palmetshofer L.,Bauer P.,Stingeder G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Superconductivity at 18 K in potassium-doped C60

2. Phase separation inKxC60(0≤x≤6) as obtained fromin situRaman spectroscopy

3. C60andC70fullerenes and potassium fullerides

4. Fullerides of alkaline-earth metals

5. Raman scattering from ion-implanted graphite

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Argon retentivity of carbonaceous materials: feasibility of kerogen as a carrier phase of Q-noble gases in primitive meteorites;Earth, Planets and Space;2009-08

2. Role of electron energy loss in modification of C60 thin films by swift heavy ions;Journal of Applied Physics;2008-09

3. Two mega-electron volt proton-irradiation effects on fullerene films;Radiation Effects and Defects in Solids;2007-04

4. Multiple Charged Nitrogen Ion Beam Irradiation of Fullerene Thin Films;Fullerenes, Nanotubes and Carbon Nanostructures;2007-03

5. Planar doping of crystalline fullerene with cobalt;Chemical Physics Letters;2006-06

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