Ion beam synthesis by tungsten-implantation into 6H-silicon carbide-Reference-Cited by-同舟云学术

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Ion beam synthesis by tungsten-implantation into 6H-silicon carbide

Published:1996-05 Issue:1-4 Volume:112 Page:338-341
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Weishart H.,Steffen H.J.,Matz W.,Voelskow M.,Skorupa W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Growth and Properties of β‐SiC Single Crystals

2. Silicon carbide (SiC)—Recent results in physics and in technology

3. Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam synthesis of 4H-(Si1-xC1-y)Gex+ysolid solutions;physica status solidi (a);2007-04

2. Diamond formation by carbon implantation into cubic silicon carbide;Diamond and Related Materials;2004-04

3. Diamond formation in cubic silicon carbide;Applied Physics Letters;2003-01-06

4. Structural and compositional characterization of 6H–SiC implanted with N+ and Al+ ions using optical methods;Diamond and Related Materials;1999-03

5. A novel (SiC)1−x(AlN)x compound synthesized using ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

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