Control of the buried SiO2 layer thickness and Si defect density in SIMOX substrates — structural investigation and process optimisation

Author:

Marsh C.D.,Nejim A.,Li Y.,Booker G.R.,Hemment P.L.F.,Chater R.J.,Kilner J.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. W.E. Baily (ed.), Proc. 5th Int. Symp. on Silicon on Insulator Technology and Devices, vol. 92–113.

2. A. Yoshino, W.E. Baily (ed.), Proc. 5th Int. Symp. on Silicon on Insulator Technology and Devices, vol. 92–113, p. 321.

3. SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter

4. Development of second generation oxygen implanter

5. Formation of thin silicon films using low energy oxygen ion implantation

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comparative Study of SIMOX Structures Using Four Analytical Techniques;Surface and Interface Analysis;1996-04

2. A model for SIMOX buried-oxide high-field conduction;IEEE Transactions on Electron Devices;1996

3. SIMOX: processing, layer parameters design, and defects control;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05

4. An investigation of the role of the time averaged ion beam current density upon the defect densities in thin film SIMOX;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02

5. Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material;MRS Proceedings;1993

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