Iron gettering and doping in silicon due to MeV carbon implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Symp. C on High Energy Implantation;Tsukamoto,1991
2. Gettering by ion implantation
3. Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation
4. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations
5. Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer
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1. Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon;Modern Electronic Materials;2019-06-01
2. Gettering and Passivation of Metals in Silicon and Germanium;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
3. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions;Nanoscale Research Letters;2014-12
4. Fe and Cu in Si: Lattice sites and trapping at implantation-related defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
5. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03
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