EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions-Reference-Cited by-同舟云学术

EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions

Published:1994-11 Issue:3 Volume:94 Page:240-244
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Varichenko V.S.,Zaitsev A.M.,Lindner J.K.N.,Domres R.,Penina N.M.,Erchak D.P.,Chelyadinskii A.R.,Martinovitsh V.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Defects and Radiation Effects in Semiconductors;Heidemann,1979

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

4. EPR study of defects produced by MeV Ag ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-05

5. Damage production in silicon irradiated with 112 MeV Ar ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02