Damage production and annealing of ion implanted silicon carbide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
2. High temperature ion implantation of silicon carbide
3. Axial dechanneling
4. Axial dechanneling
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