Gate-edge effects on SPE regrowth from As+-implanted Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. SOLID-II: High-voltage high-gain kilo-Ångstrom-channel-length CMOSFET's using Silicide with self-aligned ultrashallow (3S) junction
2. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
3. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
4. Elimination of secondary defects in As‐implanted Si by high concentration oxygen atoms
5. Electrical Activation of Implanted Arsenic in Silicon during Low Temperature Anneal
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1. Nickel silicide encroachment formation and characterization;Microelectronic Engineering;2010-03
2. The Role of Stress on the Shape of the Amorphous-Crystalline Interface and Mask-Edge Defect Formation in Ion-Implanted Silicon;MRS Proceedings;2004
3. Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions;Materials Science and Engineering: B;2003-01
4. Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation;Journal of Materials Research;2001-11
5. The crystallisation of deep amorphous wells in silicon produced by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
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