Investigation of radiation damage in ion implanted and annealed SiC layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
2. Polytype transitions in ion implanted silicon carbide
3. Ion implantation effects in silicon carbide
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