Current status of ion implantation equipment and techniques for semiconductor IC fabrication

Author:

Current Michael I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference38 articles.

1. D. Hutcheson, VLSI Research, San Jose, CA.

2. these Proceedings (Ion Implantation Equip. & Tech. '84);Ziegler,1985

3. presentation T-9, 5th Int. Conf. on Ion Implantation Equipment and Techniques;Purser,1984

4. these Proceedings (Ion Implantation Equip. & Tech. '84);Rathmell,1985

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ion beam techniques in microelectronics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05

2. A View of the Commercial Application of Ion Implantation for Silicon VLSI Manufacturing;MRS Proceedings;1993

3. Ion implantation challenges in the drive towards 64 Mb and 256 Mb memory cell type devices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

4. The Present State of Ion Implantation Equipment;Physica Status Solidi (a);1989-04-16

5. Ion Beam Techniques and Applications;VLSI Electronics Microstructure Science;1989

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