Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors-Reference-Cited by-同舟云学术

Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors

Published:1984-02 Issue:2-3 Volume:1 Page:348-354
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Feigl F.J.,Gale R.,Chew H.,Magee C.W.,Young D.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

1. MOS physics and technology;Nicollian,1982

2. MOS physics and technology;Nicollian,1982

5. Electrical, magnetic, and optical properties of glasses;Aitken,1980

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