Pileup of arsenic implanted into silicon with high doses at surfaces-Reference-Cited by-同舟云学术

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Pileup of arsenic implanted into silicon with high doses at surfaces

Published:1989-03 Issue:1-4 Volume:39 Page:362-365
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yokota Katsuhiro,Ohtsuki Koichi,Ishihara Shinji,Kimura Itsuro

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Physics and Technology of Semiconductors;Grove,1967

2. Metastable Phases by Ion Implantation;Williams,1982

3. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

4. Ion Implantation and Beam Processing;Williams,1984

5. Ion Implantation Science and Technology;Mader,1984

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative Evaluation of Dopant Loss in 5–10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation;Japanese Journal of Applied Physics;1999-04-30

2. Anomalous diffusion of lightly implanted As into Si substrate during N2annealing;Applied Physics Letters;1994-06-06

3. Accumulation of implanted arsenic at the interface during annealing on thermally oxidized Si and SiO2 covered Si;Applied Surface Science;1990-01

4. 2 Diffusion in Si - References;Diffusion in Semiconductors

5. 2 Diffusion in Si;Diffusion in Semiconductors

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