Formation of titanium silicides by high dose ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. Silicides for VLSI Applications;Murarka,1983
2. Growth kinetics of platinum silicide
3. Laser-Solid Interactions and Laser Processing,1979
4. Rapid annealing of titanium silicide using a graphite strip heater
5. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
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1. Microstructure and Properties Characterization of Silicon Coatings Prepared by Vacuum Plasma Spraying Technology;Journal of Thermal Spray Technology;2009-05-07
2. Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer;Applied Surface Science;1999-04
3. Phase formation in silicon carbide, silicon, and glassy carbon after high-dose titanium implantation using a MEVVA ion source;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Investigation of chromium, cobalt, and nickel-implantation in silicon using Auger electron spectrometry, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and Monte Carlo simulation;Analytical Chemistry;1991-08-01
5. Evaluation of electrical properties of vanadium suicide-silicon Schottky diodes formed by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
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