Low power ion-beam-assisted etching of indium phosphide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Temperature Dependence of InP and GaAs Etching in a Chlorine Plasma
2. Etching of gallium arsenide and indium phosphide in rf discharges through mixtures of trichlorofluoromethane and oxygen
3. Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
4. Directional reactive‐ion‐etching of InP with Cl2 containing gases
5. Reactive ion beam etching of InP with Cl2
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1. X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01
2. Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-05
3. Comparative study of Cl[sub 2], Cl[sub 2]∕O[sub 2], and Cl[sub 2]∕N[sub 2] inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Dry Etching Technology for Optical Devices;WDM Technologies;2002
5. Dry Etching of InP Vias;Handbook of Advanced Plasma Processing Techniques;2000
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