High-temperature ion implantation in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference34 articles.
1. High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
2. Ion Implantation in Semiconductors;Mayer,1970
3. Influence of temperature on phosphorus ion behavior during silicon bombardment
4. Secondary defects in phosphorus‐implanted silicon
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