Ion beam synthesis of thin buried layers of SiO2 in silicon

Author:

Hemment PLF,Reeson KJ,Kilner JA,Chater RJ,Marsh C,Booker GR,Celler GK,Stoemenos J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference17 articles.

1. J R Davis, M R Taylor, G D T Spiller, P J Skevingtion and P L F Hemment, Appl Phys Letts, submitted for publication.

2. High-voltage CMOS SIMOX technology and its application to a BSH-LSI

3. IEEE SOS/SOI Workship;Davis,1985

4. High quality Si‐on‐SiO2films by large dose oxygen implantation and lamp annealing

5. Mat Res Soc Meeting;Margail,1985

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2. Ion beam synthesis of compound nanoparticles in SiO2;Journal of Materials Science: Materials in Electronics;1999

3. Experimental investigation of Ostwald ripening in an implanted system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

4. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

5. Ion-beam synthesis and structural characterization of ZnS nanocrystals in SiO2;Applied Physics Letters;1998-06-29

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