The mechanism for activating tin implants in GaAs-Reference-Cited by-同舟云学术

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The mechanism for activating tin implants in GaAs

Published:1986-11 Issue:11-12 Volume:36 Page:921-923
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Bensalem R,Sealy BJ

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference7 articles.

1. Solubility and point defect-dopant interactions in GaAs—II

2. B J Sealy, N J Barrett and R Bensalem, to be published.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of electrical properties in ion implanted GaAs;Physics Procedia;2009-11

2. Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth;Journal of Applied Physics;1993-10

3. Diffusion and activation mechanisms in ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03

4. Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs;Journal of Applied Physics;1989-02

5. Ion Implantation Processing of Gaas and Related Compounds;MRS Proceedings;1989

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