Influence of Si segregation on the two-dimensional electron gas mobility of inverted HEMT structures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
1. High-mobility inverted selectively doped heterojunctions
2. Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy
3. Silicon segregation in delta‐doped GaAs characterized by Auger electron spectroscopy
4. Si migration effects in GaAs/(Al,Ga)As heterojunction and δ-doped structures
5. Silicon migration during MBE growth of doped (A1, Ga)As films
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Literaturverzeichnis;Oberflächenanalytische Charakterisierung von metallischen Verunreinigungen und Oxiden auf GaAs;1997
2. Coupling of Two-Dimensional and Surface Plasmons at Selectively-Doped Semiconductor Heterostructures;Journal of the Physical Society of Japan;1996-12-15
3. Molecular beam epitaxy of GaAs/AlxGa1−xAs/InyGa1−yAs heterostructures for opto-electronic devices: control of growth parameters;Applied Surface Science;1996-07
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