13. Measurement of the lattice constant of SiGe heteroepitaxial layers grown on a silicon substrate
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference10 articles.
1. Some practical remarks on the design of experimental systems for expitaxial growth of Si, Ge and SiGe
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5. Epitaxial growth of silicon-germanium single crystals
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3. Structure, properties and applications of GexSi1-xstrained layers and superlattices;Semiconductor Science and Technology;1991-07-01
4. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography;Advances in Physics;1990-04
5. Correspondence between coherently strained multilayers and a single coherently strained layer on lattice mismatched substrate;Journal of Applied Physics;1986-05
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