Comparative in situ study of tantalum thin film oxidation in isothermal and nonisothermal conditions-Reference-Cited by-同舟云学术

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Comparative in situ study of tantalum thin film oxidation in isothermal and nonisothermal conditions

Published:1988-01 Issue:1 Volume:38 Page:15-19
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Lugomer Stjepan,Kerenović Midhat,Stipaničić Mladen,Lekić Sreten

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference18 articles.

1. High Temperature Oxidation of Metals;Kofstad,1963

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of oxygen on the thermomechanical behavior of tantalum thin films during the β–α phase transformation;Journal of Applied Physics;2006-12-15

2. Applicability of Ta/GaAs Schottky photodiodes prepared by ion-assisted processes;Sensors and Actuators A: Physical;1994-07

3. Characterization of thermally oxidized Ta/GaAs Schottky barrier structures prepared by low energy RF sputtering with X-ray photoemission, TEM and optical transmittance measurements;Applied Surface Science;1992-01

4. Ce-catalyzed oxidation of Ta(110);Physical Review B;1990-07-15

5. Ta/GaAs schottky barriers produced by in situ sputter etching, RF magnetron sputtering of Ta, and its thermal oxidation;physica status solidi (a);1990-04-16

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