The effect of ion implantation on polymer mask resistance to ion beam etching
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference6 articles.
1. High Resolution Photomasks with Ion‐Bombarded Polymethyl Methacrylate Masking Medium
2. Proc Int Conf on Electron Beam Technol;Grigoryev,1985
3. The mechanism of ion implantation passivation of PMMA for lithography with dry etch development
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3. Conductance enhancement of polymethylmethacrylate bombarded by low-energy ions;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-09
4. Mechanism of etching and surface relief development of PMMA under low-energy ion bombardment;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
5. Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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