Deep level transient spectroscopic observations of defects induced in Si during S-gun sputter deposition of Ti-W
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
2. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
3. Characterization of process‐induced defects and device properties of ion beam sputter‐deposited Mo contacts on Si
4. Electrical characteristics of sputtering-induced defects in n-type silicon
5. Electrical Defects in Silicon Introduced by Sputtering and Sputter‐Etching
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge;Journal of Electronic Materials;2007-09-21
2. Effect of deep traps on the capacitance‐voltage plots of Schottky barrier diodes: Application to the study of sputter‐etched Ti‐W/n‐Si diodes;Journal of Applied Physics;1993-02-15
3. Barrier layers as resonators on deep centers;Soviet Physics Journal;1990-11
4. Detection of minority‐carrier defects by deep level transient spectroscopy using Schottky barrier diodes;Journal of Applied Physics;1987-04
5. Characterization of defects introduced during dc magnetron sputter deposition of Ti–W on n-Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-09
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