Characterization of ZnO films prepared by dc reactive magnetron sputtering at different oxygen partial pressures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference15 articles.
1. Structures and SAW properties of rf-sputtered single-crystal films of ZnO on sapphire
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4. Thick Film ZnO Resistive Gas Sensors: Analysis of Their Kinetic Behavior
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1. Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films;Thin Solid Films;2023-03
2. Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering;Semiconductors;2019-04
3. Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio;Nanoscale Research Letters;2013-11-16
4. Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering;Materials Science in Semiconductor Processing;2013-06
5. Effect of Sputtering Powers on Mg and Ga Co-Doped ZnO Thin Films with Transparent Conducting Characteristics;Korean Journal of Materials Research;2013-03-27
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