Fabrication parameters and NO2 sensitivity of reactively RF-sputtered In2O3 thin films

Author:

Steffes H,Imawan C,Solzbacher F,Obermeier E

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Methods for the preparation of NO, NO2 an H2 sensors based on tin oxide thin films grown by means of RF-magnetron sputtering technique;Sberveglieri;Sens. Actuators, B,1992

2. In2O3 and In2O3-MoO3 thin film semiconductor sensors for O3 and NO2 detection;Ivanovskaya,1997

3. NOx sensors for exhaust monitoring;Satake,1990

4. Influence of oxygen pressure on the structure of reactively deposited indium oxide films;Muranaka;J. Mater. Chem.,1993

5. D. Mutschall, Herstellung und Charakterisierung von NiO- und MoO3-Dünnschichten für Anwendungen in der Gas-Mikrosensorik, PhD thesis, Department of Electrical Engineering, Technical University Berlin, Germany, 1997, pp. 76–77.

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