Optimal growth procedure of GaInP/GaAs heterostructure for high-efficiency solar cells-Reference-Cited by-同舟云学术

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Optimal growth procedure of GaInP/GaAs heterostructure for high-efficiency solar cells

Published:1998-01 Issue:1-4 Volume:50 Page:221-227
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Kitatani T.,Yazawa Y.,Watahiki S.,Tamura K.,Minemura J.,Warabisako T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. 29.5%‐efficient GaInP/GaAs tandem solar cells

2. LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

3. Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-sphere surface arrays based on GaAs solar cells;Journal of Semiconductors;2020-01-01

2. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells;Japanese Journal of Applied Physics;2016-01-05

3. Improved optical absorption and photocurrent of GaAs solar cells with hexagonal micro-hole array surface texturing;Journal of Crystal Growth;2013-05

4. Laser assisted electrochemical preparation of micro and nanopores in Ga x In1−x P;Journal of Nanoparticle Research;2011-04-11

5. Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs;Journal of Crystal Growth;2009-04

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