Epitaxy of Zn2TiO4 (111) thin films on GaN (001)
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
2. DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates
3. Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type GaN
4. Effect of annealing on gan-insulator interfaces characterized by metal-insulator-semiconductor capacitors
5. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
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1. Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates;Materials Letters;2021-11
2. Fabrication of porous Zn2TiO4–ZnO microtubes and analysis of their acetone gas sensing properties;Rare Metals;2020-08-06
3. Effect of the Eu3+ (x = 0, 1, 2 and 3 mol%) doped Zn2−xTiO4 and Zn2Ti1−xO4 obtained by complex polymerization method: photoluminescent and photocatalytic properties;Journal of Materials Science: Materials in Electronics;2019-11-08
4. Visible photon excited photoluminescence; photometric characteristics of a green light emitting Zn2TiO4:Tb3+nanophosphor for wLEDs;Materials Research Express;2016-07-22
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