Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications-Reference-Cited by-同舟云学术

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Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

Published:1998-12 Issue:12 Volume:42 Page:2239-2250
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kopf R.F,Hamm R.A,Malik R.J,Ryan R.W,Burm J,Tate A,Chen Y.-K,Georgiou G,Lang D.V,Geva M,Ren F

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. InP/InGaAs double-HBT technology for high bit-rate communication circuits

2. Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

3. Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

4. Yamahata, S., Kurishima, K., Nakajima, H., Kobayashi, T. and Matsuoka, Y., IEEE GaAs IC Symposium, 1994, p. 345

5. Comparison of graded and abrupt junction In0.53Ga0.47As heterojunction bipolar transistors

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1. Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers;Journal of Crystal Growth;2013-05

2. Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures;Journal of Crystal Growth;2003-05

3. Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects;Computational Materials Science;2002-05

4. Progress toward 100 GHz Logic in InP HBT IC Technology;International Journal of High Speed Electronics and Systems;2001-03

5. Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during CH4–H2 plasma etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-07

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