GaN-based electronic devices

Author:

Shur M.S,Gaska R,Bykhovski A

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Atomically resolved study of the unpinned GaN ( 101¯0 ) surface by cross-sectional scanning tunneling microscopy;Physical Review B;2023-08-15

2. Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors;Micromachines;2023-01-27

3. Physics based model of an AlGaN/GaN vacuum field effect transistor;Journal of Vacuum Science & Technology B;2022-09

4. GaN Multipliers;Fundamentals of Terahertz Devices and Applications;2021-07-12

5. Sensor applications based on AlGaN/GaN heterostructures;Materials Science and Engineering: B;2021-01

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