Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs-Reference-Cited by-同舟云学术

Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs

Published:2000-06 Issue:6 Volume:44 Page:1059-1067
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tan Changhua,Xu Mingzhen,Wang Ziou

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Brews JR. In: Physics of the MOS Transistor. AD Kahng ed. Applied Solid State Science, Suppl. 2A. New York: Academic Press, 1981

2. Schroder DK. Semiconductor material and device characterization. New York: Wiley, 1990 [chapter 4]

3. ASTM Standard F617: Standard method for measuring MOSFET linear threshold voltage, 1998. Annual Book of ASTM Standards, Am Soc Test Mat. Philadelphia. 1998

4. ASTM Standard F1096. Standard method for measuring MOSFET saturated threshold voltage, 1998. Annual Book of ASTM Standards, Am Soc Test Mat. Philadelphia, 1998

5. New experimental technique for fast and accurate extraction;Corsi;Electron Lett,1993

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