Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes-Reference-Cited by-同舟云学术

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Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

Published:2002-12 Issue:12 Volume:46 Page:2291-2294
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cao X.A,LeBoeuf S.F,Kim K.H,Sandvik P.M,Stokes E.B,Ebong A,Walker D,Kretchmer J,Lin J.Y,Jiang H.X

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Shortest wavelength semiconductor laser diode

3. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

4. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

5. Theory of Threading Edge and Screw Dislocations in GaN

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