Physical modeling of off-state breakdown in power GaAs MESFETs

Author:

Kunihiro Kazuaki,Takahashi Yuji,Ohno Yasuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. A 240 W power heterojunction FET with high efficiency for W-CDMA base stations;Takenaka;IEEE MTT-S Digest,2001

2. An ultra broad band 300 W GaAs power FET for W-CDMA base stations;Ebihara;IEEE MTT-S Digest,2001

3. power-limiting breakdown effects in GaAs MESFET’s;Frensley;IEEE Trans. Electron Dev.,1981

4. Control of gate–drain avalanche in GaAs MESFET’s;Wemple;IEEE Trans. Electron Dev.,1980

5. The role of the device surface in the high voltage behaviour of the GaAs MESFET;Barton;Solid-State Electron.,1986

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2. Field effect controlled lateral field emission triode;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-03

3. 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection;IEICE Transactions on Electronics;2010

4. Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress;IEICE Transactions on Electronics;2008-07-01

5. Study of surface-trap-induced gate depletion region of field-modulating plate GaAs–FETs;Solid-State Electronics;2006-03

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