Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors-Reference-Cited by-同舟云学术

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Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors

Published:2003-04 Issue:4 Volume:47 Page:639-644
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Danielsson E.,Zetterling C.-M.,Domeij M.,Östling M.,Forsberg U.,Janzén E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Chow TP. Progress in SiC high-voltage power switching devices. In: 1st international workshop on ultra-low-loss power device technology. 2000. p. 117–24

2. Demonstration of 4H-SiC power bipolar junction transistors;Luo;Electron. Lett.,2000

3. 1800 V NPN bipolar junction transistors in 4H-SiC;Ryu;IEEE Electron. Dev. Lett.,2001

4. Wright NG, Johnson CM, O’Neill AG, Horsfall A, Ortolland S, Adachi K, et al. Implanted bipolar technology in 4H-SiC. In: Material research society symposium. 2000. p. 622

5. SiC and GaN bipolar power devices;Chow;Solid-State Electron.,2000

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal behavior Spice study of 6H-SiC NMOS transistors;Microelectronics Journal;2009-06

2. Modeling dc gain performance of 4H‐SiC BJTs;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2007-11-13

3. Extrinsic Base Design of SiC Bipolar Transistors;Materials Science Forum;2004-06

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