Extracting diffusion length using the single contact electron beam induced current technique-Reference-Cited by-同舟云学术

Extracting diffusion length using the single contact electron beam induced current technique

Published:2000-09 Issue:9 Volume:44 Page:1585-1590
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ong Vincent K.S,Wu Dethau

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Orton JW, Blood P. The electrical characterization of semiconductors: measurement of minority carrier properties. New York: Academic Press, 1990. p. 185–276

2. Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials

3. Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriers;Wu;J Appl Phys,1978

4. Application of scanning electron microscopy to determination of surface recombination velocity: GaAs;Jastrzebski;Appl Phys Lett,1975

5. Charge collection scanning electron microscopy;Leamy;J Appl Phys,1982

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1. TCAD Studies on the Determination of Diffusion Length for the Planar-Collector EBIC Configuration With Any Size of the Schottky Contact;IEEE Transactions on Electron Devices;2015-09

2. Scanning electron and laser beams induced current (SELBIC) method for observing failures in GaAs high electron mobility transistors;Superlattices and Microstructures;2009-04

3. Defect Analysis of High Electron Mobility Transistors Using a Scanning Electron and Laser Beams Induced Current (SELBIC) System;Transactions of The Japan Institute of Electronics Packaging;2008