Doping induced design considerations for InP/In0.53Ga0.47As heterojunction bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. InP HBTs: Growth, Processing and Applications;Pearton,1995
2. Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed
3. Heterostructure bipolar transistors and integrated circuits
4. Base doping limits in heterostructure bipolar transistors
5. Scaling ‘ballistic’ heterojunction bipolar transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications;Superlattices and Microstructures;2015-10
2. Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs;Journal of Semiconductors;2009-04
3. Composition induced design considerations for InP/GaxIn1−xAs heterojunction bipolar transistors;Solid-State Electronics;2002-12
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