InGaN quantum dot photodetectors-Reference-Cited by-同舟云学术

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InGaN quantum dot photodetectors

Published:2003-10 Issue:10 Volume:47 Page:1753-1756
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ji L.W.,Su Y.K.,Chang S.J.,Liu S.H.,Wang C.K.,Tsai S.T.,Fang T.H.,Wu L.W.,Xue Q.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. InGaN-AlInGaN multiquantum-well LEDs

3. InGaN/GaN MQW p–n junction photodetectors

4. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

5. High-quality visible-blind AlGaN p-i-n photodiodes

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1. Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures*;Chinese Physics B;2020-07-01

2. Light coupling for on-chip optical interconnects;Optics & Laser Technology;2017-12

3. Suspended p–n junction InGaN/GaN multiple quantum wells device with bottom silver reflector;Optics Communications;2017-07

4. Humidity sensing and resonant tunneling properties of indium nitride p-n device;Microelectronic Engineering;2017-03

5. Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique;Nanoscale Research Letters;2016-05-04

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