Growth and characterization of amorphous boron nitride dielectric films on Si via RF sputtering at room temperature-Reference-Cited by-同舟云学术

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Growth and characterization of amorphous boron nitride dielectric films on Si via RF sputtering at room temperature

Published:2018-09 Issue: Volume:227 Page:284-288
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Abbas Qasim,Liang Hongwei,Shi Jianjun,Chen Yuanpeng,Xia Xiaochuan,Ahmad Aqrab ul,Liu Jianxun,Du Guotong

Funder

National Science Foundation of China

National Key R&D Plan

Fundamental Research Funds for the Central Universities

Liaoning Provincial Natural Science Foundation of China

China Postdoctoral Science Foundation

State Key Laboratory on Integrated Optoelectronics

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Thin film growth of boron nitride on α-Al2O3 (001) substrates by reactive sputtering;Anzai;Mater. Res. Bull.,2011

2. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al2O3 passivation layer;He;ACS Appl. Mater. Interfaces,2014

3. Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks;He;APL Mater.,2013

4. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates;He;Surf. Sci. Rep.,2013

5. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation;He;J. Mater. Chem. C,2014

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