Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components-Reference-Cited by-同舟云学术

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Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

Published:2021-02 Issue: Volume:285 Page:129058
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kazar Mendes M.,Ghouila-Houri C.,Hammami S.,Arnoult T.,Pernod P.,Talbi A.

Funder

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Fabrication of micro-cantilever and its theoretical validation for energy harvesting applications;Gupta;Microsyst Technol.,2019

2. CMOS-MEMS membrane for audio-frequency acoustic actuation;Neumann;Sens. Actuators, A,2002

3. Unsteady flows measurements using a calorimetric wall shear stress micro-sensor;Ghouila-Houri;Exp Fluids,2019

4. Isotropic silicon etching with XeF2 gas for wafer-level micromachining applications;Xu;J. Microelectromech. Syst.,2012

5. Reactive ion etching in SF6 gas mixtures;Pinto;J. Electrochem. Soc.,1987

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1. Electropolishing and Shaping of Micro-Scale Metallic Features;Micromachines;2022-03-18

2. High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length;Nano Letters;2021-05-06

3. High temperature gradient Pirani micro-sensor designed and tested for aerodynamic wall pressure measurement;IEEE Sensors Journal;2021

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