Influence of Se supply for selenization of Cu(In,Ga)Se2 precursors deposited by sputtering from a single quaternary target-Reference-Cited by-同舟云学术

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Influence of Se supply for selenization of Cu(In,Ga)Se2 precursors deposited by sputtering from a single quaternary target

Published:2014-03 Issue: Volume:118 Page:21-23
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kong Hui,He Jun,Meng Xiankuan,zhu Liping,Tao Jiahua,Sun Lin,Yang Pingxiong,Chu Junhao

Funder

National Natural Science Foundation of China

Science,Shanghai Rising-Star Program

Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Solar cell efficiency tables (version 36)

2. High‐efficiency CuInxGa1−xSe2solar cells made from (Inx,Ga1−x)2Se3precursor films

3. Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target

4. Study of In–Se binaries of In-rich CuInSe2 thin film prepared by selenization after cosputtering

5. Properties of Cu(In,Ga)Se2Thin Films Prepared by Chemical Spray Pyrolysis

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtered Ag-alloyed Cu(In, Ga)(Se, S)2 solar cells by sequential process;Solar Energy;2021-03

2. Preparation of Cu(In,Ga)Se2 nanoparticles via solvothermal method in conjunction with ball milling process and its applications to thin-film solar cells;Journal of Alloys and Compounds;2019-06

3. The effects of annealing temperature on CIGSeS solar cells by sputtering from quaternary target with H2S post annealing;Applied Surface Science;2019-04

4. Formation of gradient Ga distribution in Cu(In,Ga)Se2 thin-film solar cells prepared by (InGa)2Se3/CuInGaSe2 stacking structure followed by Se-Vapor selenization;Materials Chemistry and Physics;2018-09

5. Room temperature pulsed-DC sputtering deposition process for CIGS absorber layer: Material and device characterizations;Thin Solid Films;2018-08

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