Raman spectroscopic study of He ion implanted 4H and 6H-SiC
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Silicon carbide: synthesis and processing
2. Ion-beam-induced amorphization of 6H-SiC
3. Damage formation in high energy helium implanted 4H-SiC
4. Damage formation and recovery in temperature helium implanted 4H–SiC
5. Ion-beam induced damage and annealing behaviour in SiC
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