Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Phase-change materials for rewriteable data storage
3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
4. Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5
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2. Study on the physical properties and structure of titanium antimony thin films for phase change memory application;Journal of Materials Science;2017-07-05
3. Development and application of a new CMP slurry for phase change memory;SPIE Proceedings;2016-10-12
4. Terabit-per-square-inch scanning probe phase-change memory model based on nucleation-growth theory;Materials Letters;2013-12
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