Polytypic transformation behavior from 4H-SiC to 3C-SiC during high-speed scratching of single crystalline silicon carbide
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Raman studies in Al plus implanted semi insulating 6H-SiC;Kamalakkannan;Mater. Lett.,2023
2. Mechanisms of tool-workpiece interaction in ultraprecision diamond turning of single-crystal SiC for curved microstructures;Huang;Int. J. Mach. Tools Manuf.,2023
3. A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide;Luo;J. Eur. Ceram. Soc.,2012
4. Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates;Tian;Int. J. Extrem. Manuf.,2020
5. Stacking fault formation in highly doped 4H-SiC epilayers during annealing;Chung;Appl. Phys. Lett.,2002
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